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? 2002 microchip technology inc. ds21449c-page 1 m tc649 features ? temperature proportional fan speed for acoustic control and longer fan life ? efficient pwm fan drive ? 3.0v to 5.5v supply range: - fan voltage independent of tc649 supply voltage - supports any fan voltage ? fansense? fault detection circuits protect against fan failure and aid system testing ? automatic shutdown mode for ?green? systems ? supports low cost ntc/ptc thermistors ? space saving 8-pin msop package applications ? power supplies ? computers ? file servers ? portable computers ? telecom equipment ? upss, power amps ? general purpose fan speed control available tools ? fan controller demonstration board (tc642demo) ? fan controller evaluation kit (tc642ev) package types general description the tc649 is a switch mode, fan speed controller for use with brushless dc fans. temperature proportional speed control is accomplished using pulse width mod- ulation (pwm). a thermistor (or other voltage output temperature sensor) connected to the v in input fur- nishes the required control voltage of 1.25v to 2.65v (typical) for 0% to 100% pwm duty cycle. the tc649 automatically suspends fan operation when measured temperature (v in ) is below a user programmed minimum setting (v as ). an integrated start-up timer ensures reliable motor start-up at turn-on, coming out of shutdown mode, auto-shutdown mode or following a transient fault. in normal fan operation, a pulse train is present at sense (pin 5). the tc649 features microchip technology?s proprietary fansense tm technology for increasing system reliability. a missing pulse detector monitors this pin during fan operation. a stalled, open or unconnected fan causes the tc649 to trigger its start-up timer once. if the fault persists, the fault output goes low, and the device is latched in its shut- down mode. see section 5.0, ?typical applications?, for more information and system design guidelines. the tc649 is available in the 8-pin pdip, soic and msop packages and is available in the industrial and extended commercial temperature ranges. soic/pdip/msop 18 27 36 45 gnd c f v in v as fault sense v dd v out tc649 pwm fan speed controller with auto-shutdown and fansense? technology
tc649 ds21449c-page 2 ? 2002 microchip technology inc. functional block diagram fault shdn sense pwm gnd 70mv (typ.) 10k v as v shdn v in c f v dd v out tc649 control logic + ? + ? + ? + ? 3 x t pwm timer start-up timer clock generator missing pulse detect
? 2002 microchip technology inc. ds21449c-page 3 tc649 1.0 electrical characteristics absolute maximum ratings* supply voltage ......................................................... 6v input voltage, any pin.... (gnd ? 0.3v) to (v dd +0.3v) package thermal resistance: pdip (r ja ) ............................................125c/w soic (r ja ) ............................................155c/w msop (r ja ) .......................................... 200c/w specified temperature range ........... -40c to +125c storage temperature range.............. -65c to +150c *stresses above those listed under "absolute maximum rat- ings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. expo- sure to absolute maximum rating conditions for extended peri- ods may affect device reliability. dc electrical specifications electrical characteristics: unless otherwise specified, t min t a t max , v dd = 3.0v to 5.5v. symbol parameter min typ max units test conditions v dd supply voltage 3.0 ? 5.5 v i dd supply current, operating ? 0.5 1.0 ma pins 6, 7 open, c f = 1 f, v in = v c(max) i dd(shdn) supply current, shutdown/ auto-shutdown mode ? 25 ? a pins 6, 7 open; note 1 c f =1 f, v in = 0.35v i in v in , v as input leakage -1.0 ? +1.0 a v out output t r v out rise time ? ? 50 sec i oh = 5 ma, note 1 t f v out fall time ? ? 50 sec i ol = 1 ma, note 1 t shdn pulse width (on v in ) to clear fault mode 30 ? ? sec v shdn , v hyst specifications, note 1 i ol sink current at v out output 1.0 ? ? ma v ol = 10% of v dd i oh source current at v out output 5.0 ? ? ma v oh = 80% of v dd sense input v th(sense) sense input threshold voltage with respect to gnd 50 70 90 mv note 1 fault output v ol output low voltage ? ? 0.3 v i ol = 2.5 ma t mp missing pulse detector timer ? 32/f ? sec c f = 1.0 f t start start-up timer ? 32/f ? sec c f = 1.0 f t diag diagnostic timer ? 3/f ? sec c f = 1.0 f v in , v as inputs v c(max) voltage at v in for 100% duty cycle 2.5 2.65 2.8 v v c(span) v c(max) - v c(min) 1.3 1.4 1.5 v v as auto-shutdown threshold v c(max) - v c(span) ?v c(max) v v shdn voltage applied to v in to release reset/shutdown ?? v dd x 0.13 v v rel voltage applied to v in to release reset mode v dd x 0.19 ? ? v v dd = 5v, see figure 5-11 v hyst hysteresis on v shdn, v rel ?0.01 x v dd ?v v has hysteresis on auto-shutdown comparator ?70?mv pulse width modulator f osc pwm frequency 26 30 34 hz c f = 1.0 f note 1: ensured by design, not tested.
tc649 ds21449c-page 4 ? 2002 microchip technology inc. 2.0 pin descriptions the descriptions of the pins are listed in table 2-1. table 2-1: pin function table 2.1 analog input (v in ) the thermistor network (or other temperature sensor) connects to the v in input. a voltage range of 1.25v to 2.65v (typical) on this pin drives an active duty cycle of 0% to 100% on the v out pin. the tc649 enters shut- down mode when v in v shdn. during shutdown, the fault output is inactive, and supply current falls to 25 a (typical). the tc649 exits shutdown mode when v in v rel . see section 5.0, ?typical applications?, for details. 2.2 analog output (c f ) c f is the positive terminal for the pwm ramp generator timing capacitor. the recommended c f is 1 f for 30 hz pwm operation. 2.3 analog input (v as ) an external resistor divider connected to the v as input sets the auto-shutdown threshold. auto-shutdown occurs when v in v as . the fan is automatically restarted when v in (v as + v has ). see section 5.0, ?typical applications?, for more details. 2.4 ground (gnd) gnd denotes the ground terminal. 2.5 analog input (sense) pulses are detected at the sense pin as fan rotation chops the current through a sense resistor (r sense ). the absence of pulses indicates a fault. see section 5.0, ?typical applications?, for more details. 2.6 digital output (fault ) the fault line goes low to indicate a fault condition. when fault goes low due to a fan fault condition, the device is latched in shutdown mode until deliberately cleared or until power is cycled. 2.7 digital output (v out ) v out is an active high complimentary output that drives the base of an external npn transistor (via an appropri- ate base resistor) or the gate of an n-channel mosfet. this output has asymmetrical drive (see section 1.0, ?electrical characteristics?). 2.8 power supply input (v dd ) v dd may be independent of the fan?s power supply (see section 1.0, ?electrical characteristics?). pin no. symbol descriptiion 1v in analog input 2c f analog output 3v as analog input 4 gnd ground terminal 5 sense analog input 6fault digital (open collector) output 7v out digital output 8v dd power supply input
? 2002 microchip technology inc. ds21449c-page 5 tc649 3.0 detailed description 3.1 pwm the pwm circuit consists of a ramp generator and threshold detector. the frequency of the pwm is determined by the value of the capacitor connected to the c f input. a frequency of 30 hz is recommended for most applications (c f = 1 f). the pwm is also the time base for the start-up timer (see section 3.3, ?start-up timer?). the pwm voltage control range is 1.25v to 2.65v (typical) for 0% to 100% output duty cycle. 3.2 v out output the v out pin is designed to drive a low cost transistor or mosfet as the low side power switching element in the system. various examples of driver circuits will be shown throughout the datasheet. this output has asymmetric complementary drive and is optimized for driving npn transistors or n-channel mosfets. since the system relies on pwm rather than linear control, the power dissipation in the power switch is kept to a minimum. generally, very small devices (to-92 or sot packages) will suffice. 3.3 start-up timer to ensure reliable fan start-up, the start-up timer turns the v out output on for 32 cycles of the pwm whenever the fan is started from the off state. this occurs at power-up and when coming out of shutdown or auto- shutdown mode. if the pwm frequency is 30 hz (c f = 1 f) the resulting start-up time will be approximately one second. if a fan fault is detected (see section 3.5, fault output), the diagnostic timer is triggered once, followed by the start-up timer. if the fault persists, the device is shut down (see section 3.5, fault output). 3.4 sense input (fansense? technology) the sense input (pin 5) is connected to a low value current sensing resistor in the ground return leg of the fan circuit. during normal fan operation, commutation occurs as each pole of the fan is energized. this causes brief interruptions in the fan current, seen as pulses across the sense resistor. if the device is not in shutdown or auto-shutdown mode, and pulses are not appearing at the sense input, a fault exists. the short, rapid change in fan current (high dl/dt) causes a corresponding dv/dt across the sense resistor, r sense . the waveform on r sense is differentiated and converted to a logic-level pulse-train by c sense and the internal signal processing circuitry. the presence and frequency of this pulse-train is a direct indication of fan operation. see section 5.0, ?typical applications?, for more details. 3.5 fault output pulses appearing at sense due to the pwm turning on are blanked, and the remaining pulses are filtered by a missing pulse detector. if consecutive pulses are not detected for thirty-two pwm cycles ( ? 1sec if c f = 1 f), the diagnostic timer is activated, and v out is driven high continuously for three pwm cycles ( ? 100 msec if c f = 1 f). if a pulse is not detected within this window, the start-up timer is triggered (see section 3.3, ?start-up timer?). this should clear a tran- sient fault condition. if the missing pulse detector times out again, the pwm is stopped and fault goes low. when fault is activated due to this condition, the device is latched in shutdown mode and will remain off indefinitely. the tc649 is thus prevented from attempting to drive a fan under catastrophic fault conditions. one of two things will restore operation: cycling power off and then on again; or pulling v in below v shdn and releasing it to a level above v rel . when one of these two conditions is satisfied, the normal start-up cycle is triggered and operation will resume, provided the fault has been cleared. 3.6 auto-shutdown mode if the voltage on v in becomes less than the voltage on v as , the fan is automatically shut off (auto-shutdown mode). the tc649 exits auto-shutdown mode when the voltage on v in becomes higher than the voltage on v as by v has (the auto-shutdown hysteresis voltage, see figure 3-1). the start-up timer is triggered and normal operation is resumed upon exiting auto-shut- down mode. the fault output is unconditionally inactive in auto-shutdown mode.
tc649 ds21449c-page 6 ? 2002 microchip technology inc. figure 3-1: tc649 nominal operation. 3.7 shutdown mode (reset) if an unconditional shutdown and/or device reset is desired, the tc649 may be placed in shutdown mode by forcing v in to a logic low (i.e., v in < v shdn ) (see figure 3-1). in this mode, all functions cease and the fault output is unconditionally inactive. the tc649 should not be shut down unless all heat producing activ- ity in the system is at a negligible level. the tc649 exits shutdown mode when v in becomes greater than v rel , the release voltage. entering shutdown mode also performs a complete device reset. shutdown mode resets the tc649 into its power-up state. the start-up and fault timers and any current faults are cleared. fault is unconditionally inactive in shutdown mode. upon exiting shutdown mode (v in > v rel ), the start-up timer will be triggered and normal operation will resume, assuming no fault conditions exist and v in > (v as + v has ). if a fan fault has occurred and the device has latched itself into shutdown mode, performing a reset will not clear the fault unless v in > (v as + v has ). if v in is not greater than v as + v has upon exiting shutdown mode, the fan will not be restarted, and there will be no way to establish that the fan fault has been cleared. to ensure that a complete reset takes place, the user?s circuitry must ensure that v in > (v as + v has ) when the device is released from shutdown mode. a recommended algorithm for management of the tc649 by a host microcontroller or other external circuitry is given in section 5.0, ?typical applications?. a small amount of hysteresis, typically one percent of v dd (50mv at v dd = 5.0v), is designed into the v shdn /v rel threshold. the levels specified for v shdn and v rel in section 1.0, ?electrical characteristics?, include this hysteresis plus adequate margin to account for normal variations in the absolute value of the threshold and hysteresis. 2.6v v as + v has v in t reset v rel v shdn v as 1.2v tc649 status normal operation auto-shutdown mode normal operation shut- down normal operation gnd time temp. hi lo note: if v in < v as when the device exits shut- down mode, the fan will not restart, but will be in auto-shutdown mode. caution: the fan will remain off as long as the v in pin is being held low or v in < v as + v has .
? 2002 microchip technology inc. ds21449c-page 7 tc649 4.0 system behavior the flowcharts describing the tc649?s behavioral algorithm are shown in figure 4-1. they can be summarized as follows: 4.1 power-up (1) assuming the device is not being held in shutdown or auto-shutdown mode (v in > v as )... (2) turn v out output on for 32 cycles of the pwm clock. this ensures that the fan will start from a dead stop. (3) during this start-up timer, if a fan pulse is detected, branch to normal operation; if none are received? (4) activate the 32-cycle start-up timer one more time and look for fan pulse; if a fan pulse is detected, proceed to normal operation; if none are received? (5) proceed to fan fault. (6) end. 4.2 normal operation normal operation is an endless loop which may only be exited by entering shutdown mode, auto-shutdown mode or fan fault. the loop can be thought of as exe- cuting at the frequency of the oscillator and pwm. (1) reset the missing pulse detector. (2) is tc649 in shutdown or auto-shutdown mode? if so? a. v out duty cycle goes to zero. b. fault is disabled. c. exit the loop and wait for v in > (v as + v has ) to resume operation. (3) drive v out to a duty cycle proportional to v in on a cycle by cycle basis. (4) if a fan pulse is detected, branch back to the start of the loop (1). (5) if the missing pulse detector times out ? (6) activate the 3-cycle diagnostic timer and look for pulses; if a fan pulse is detected, branch back to the start of the loop (1); if none are received? (7) activate the 32-cycle start-up timer and look for pulses; if a fan pulse is detected, branch back to the start of the loop (1); if none are received? (8) quit normal operation and go to fan fault. (9) end. 4.3 fan fault fan fault is an infinite loop wherein the tc649 is latched in shutdown mode. this mode can only be released by a reset (i.e., v in being brought below v shdn , then above (v as + v has ) or by power-cycling). (1) while in this state, fault is latched on (low) and the v out output is disabled. (2) a reset sequence applied to the v in pin will exit the loop to power-up. (3) end.
tc649 ds21449c-page 8 ? 2002 microchip technology inc. figure 4-1: tc649 behavioral algorithm flowchart. fault = 0, v out = 0 auto-shutdown fault = 1, v out = 0 cycling power v in < v shdn ? yes yes yes no no no no yes power-up v in > (v as + v has )? v in > v rel ? fan pulse detected? fan pulse detected? v in < v shdn v in < v as ? shutdown v out = 0 auto- shutdown v out = 0 yes no no no no yes yes yes power-up normal operation fan fault yes power-on reset fault = 1 v in > v rel ? no v in > (v as + v has ) yes yes no hot start fire start-up timer (1 sec) fire start-up timer (1 sec) v in > v rel yes fan fault fan fault clear missing pulse detector v out proportional to v in v in < v shdn ? v in < v as ? m.p.d. expired? fan pulse detected? shutdown v out = 0 auto shutdown v out = 0 no no no no no no yes yes yes yes normal operation power-up v in > (v as + v has ) no yes hot start yes fire diagnostic timer (100msec) fan pulse detected? fan pulse detected? fire start-up timer (1 sec) yes no
? 2002 microchip technology inc. ds21449c-page 9 tc649 5.0 typical applications designing with the tc649 involves the following: (1) the temperature sensor network must be configured to deliver 1.25v to 2.65v on v in for 0% to 100% of the temperature range to be regulated. (2) the auto-shutdown temperature must be set with a voltage divider on v as . (3) the output drive transistor and associated circuitry must be selected. (4) the sense network, r sense and c sense , must be designed for maximum efficiency while delivering adequate signal amplitude. (5) if shutdown capability is desired, the drive require- ments of the external signal or circuit must be considered. the tc642 demonstration and prototyping board (tc642demo) and the tc642 evaluation kit (tc642ev) provide working examples of tc649 cir- cuits and prototyping aids. the tc642demo is a printed circuit board optimized for small size and ease of inclusion into system prototypes. the tc642ev is a larger board intended for benchtop development and analysis. at the very least, anyone contemplating a design using the tc649 should consult the documen- tation for both tc642ev (ds21403) and tc642demo (ds21401).figure 5-1 shows the base schematic for the tc642demo. figure 5-1: typical application circuit. fault sense ntc r 1 r 2 r 3 r 4 gnd *see cautions regarding latch-up considerations in section 5.0, "typical applications". **optional. see section 5.0, "typical applications" for details. notes: fan fault shutdown shutdown** q 1 +12v +5v* v dd v in v as v out r base r sense c sense c f 1 f c f tc649 fan c b 0.01 f c b 0.01 f c b 1 f + +5v
tc649 ds21449c-page 10 ? 2002 microchip technology inc. 5.1 temperature sensor design the temperature signal connected to v in must output a voltage in the range of 1.25v to 2.65v (typical) for 0% to 100% of the temperature range of interest. the circuit in figure 5-2 illustrates a convenient way to provide this signal. figure 5-2: temperature sensing circuit. figure 5-2 shows a simple temperature dependent voltage divider circuit. rt 1 is a conventional ntc ther- mistor, while r 1 and r 2 are standard resistors. the supply voltage, v dd , is divided between r 2 and the parallel combination of rt 1 and r 1 . for convenience, the parallel combination of rt 1 and r 1 will be referred to as r temp . the resistance of the thermistor at various temperatures is obtained from the manufacturer?s specifications. thermistors are often referred to in terms of their resistance at 25c. generally, the thermistor shown in figure 5-2 is a non- linear device with a negative temperature coefficient (also called an ntc thermistor). in figure 5-2, r 1 is used to linearize the thermistor temperature response and r 2 is used to produce a positive temperature coefficient at the v in node. as an added benefit, this configuration produces an output voltage delta of 1.4v, which is well within the range of the v c(span) specification of the tc649. a 100 k ? ntc thermistor is selected for this application in order to keep i div at a minimum. for the voltage range at v in to be equal to 1.25v to 2.65v, the temperature range of this configuration is 0c to 50c. if a different temperature range is required from this circuit, r 1 should be chosen to equal the resistance value of the thermistor at the center of this new temperature range. it is suggested that a maxi- mum temperature range of 50c be used with this cir- cuit due to thermistor linearity limitations. with this change, r 2 is adjusted according to the following equations: equation more information about thermistors may be obtained from an679, ?temperature sensing technologies? , and an685, ?thermistors in single supply temperature sensing circuit? , which can be down- loaded from microchip?s website at www.microchip.com. 5.2 auto-shutdown temperature design a voltage divider on v as sets the temperature at which the part is automatically shut down if the sensed tem- perature at v in drops below the set temperature at v as (i.e. v in < v as ). as with the v in input, 1.25v to 2.65v (typ.) corresponds to the temperature range of interest from t 1 to t 2 , respectively. assuming that the temper- ature sensor network designed above is linearly related to temperature, the shutdown temperature t as is related to t 2 and t 1 by: equation for example, if 1.25v and 2.65v at v in corresponds to a temperature range of t 1 = 0c to t 2 = 125c, and the auto-shutdown temperature desired is 25c, then v as voltage is: equation the v as voltage may be set using a simple resistor divider, as is shown in figure 5-3. r 2 = 23.2 k ? r 1 =100 k ? rt 1 ntc thermistor 100 k ? @ 25?c i div v in v dd v dd x r 2 r temp (t 1 ) + r 2 = v(t 1 ) r temp (t 2 ) + r 2 = v(t 2 ) v dd x r 2 where t 1 and t 2 define the temperature range of the circuit. r temp is the parallel equivalent of the thermistor and r 1 at those temperatures. 2.65v - 1.25v t 2 - t 1 = v as - 1.25 t as - t 1 v as - 1.25 v as = ( (t as - t 1 ) + 1.25 1.4v ) t 2 - t 1 v as = (25 - 0) + 1.25 = 1.53v 1.4v (125 - 0)
? 2002 microchip technology inc. ds21449c-page 11 tc649 figure 5-3: v as circuit. per section 1.0, ?electrical characteristics?, the leak- age current at the v as pin is no more than 1 a. it is conservative to design for a divider current, i div , of 100 a. if v dd = 5.0v then: equation we can further specify r 1 and r 2 by the condition that the divider voltage is equal to our desired v as . this yields the following: equation solving for the relationship between r 1 and r 2 results in: equation in the case of this example, r 1 = (2.27) r 2 . substituting this relationship back into the v as equation above yields the resistor values: r 2 = 15.3 k ? , and r 1 = 34.7 k ? in this case, the standard values of 34.8 k ? and 15.4 k ? are very close to the calculated values and would be more than adequate. 5.3 operations at low duty cycle one boundary condition which may impact the selection of the minimum fan speed is the irregular activation of the diagnostic timer due to the tc649 ?missing? fan commutation pulses at low speeds. this is a natural consequence of low pwm duty cycles (typ- ically 25% or less). recall that the sense function detects commutation of the fan as disturbances in the current through r sense . these can only occur when the fan is energized (i.e., v out is ?on?). at very low duty cycles, the v out output is ?off? most of the time. the fan may be rotating normally, but the commutation events are occurring during the pwm?s off-time. the phase relationship between the fan?s commutation and the pwm edges tends to ?walk around? as the system operates. at certain points, the tc649 may fail to capture a pulse within the 32-cycle missing pulse detector window. if this happens, the 3-cycle diagnostic timer will be activated, the v out output will be active continuously for three cycles and, if the fan is operating normally, a pulse will be detected. if all is well, the system will return to normal operation. there is no harm in this behavior, but it may be audible to the user as the fan accelerates briefly when the diagnostic timer fires. for this reason, it is recommended that v as be set no lower than 1.8v. 5.4 fansense ? network (r sense and c sense ) the fansense network, comprised of r sense and c sense , allows the tc649 to detect commutation of the fan motor (fansense? technology). this network can be thought of as a differentiator and threshold detector. the function of r sense is to convert the fan current into a voltage. c sense serves to ac-couple this voltage signal and provide a ground-referenced input to the sense pin. designing a proper sense network is simply a matter of scaling r sense to provide the nec- essary amount of gain (i.e., the current-to-voltage con- version ratio). a 0.1 f ceramic capacitor is recommended for c sense . smaller values require larger sense resistors, and higher value capacitors are bulkier and more expensive. using a 0.1 f capacitor results in reasonable values for r sense . figure 5-4 illustrates a typical sense network. figure 5-5 shows the waveforms observed using a typical sense net- work. r 2 r 1 gnd v dd v as i div i in r 1 + r 2 i div = 1e ? 4 a , therefore 5.0v r 1 + r 2 = = 50,000 ? ? . . .
tc649 ds21449c-page 12 ? 2002 microchip technology inc. figure 5-4: sense network. figure 5-5: sense waveforms. table 5-1 lists the recommended values of r sense based on the nominal operating current of the fan. note that the current draw specified by the fan manufacturer may be a worst-case rating for near-stall conditions and may not be the fan?s nominal operating current. the values in table 5-1 refer to actual average operating current. if the fan current falls between two of the val- ues listed, use the higher resistor value. the end result of employing table 5-1 is that the signal developed across the sense resistor is approximately 450 mv in amplitude. table 5-1: r sense vs. fan current 5.5 output drive transistor selection the tc649 is designed to drive an external transistor or mosfet for modulating power to the fan. this is shown as q 1 in figures 5-1, 5-4, 5-6, 5-7, 5-8 and 5-9. the v out pin has a minimum source current of 5 ma and a minimum sink current of 1 ma. bipolar transistors or mosfets may be used as the power switching element as shown in figure 5-6. when high current gain is needed to drive larger fans, two transistors may be used in a darlington configuration. these circuit topologies are shown in figure 5-6: (a) shows a single npn transistor used as the switching element; (b) illustrates the darlington pair; and (c) shows an n- channel mosfet. one major advantage of the tc649?s pwm control scheme versus linear speed control is that the power dissipation in the pass element is kept very low. gener- ally, low cost devices in very small packages, such as to-92 or sot, can be used effectively. for fans with nominal operating currents of no more than 200 ma, a single transistor usually suffices. above 200 ma, the darlington or mosfet solution is recommended. for the fan sensing function to work correctly, it is imperative that the pass transistor be fully saturated when ?on?. q 1 gnd v dd r sense sense r base c sense (0.1 f typ.) v out fan 1 ch1 100mv tek run: 10.0ks/s sample ch2 100mv m5.00ms ch1 142mv gnd [ t ] t waveform @ sense resistor 90mv 50mv gnd waveform @ sense pin 2 nominal fan current (ma) r sense ( ? ) 50 9.1 100 4.7 150 3.0 200 2.4 250 2.0 300 1.8 350 1.5 400 1.3 450 1.2 500 1.0
? 2002 microchip technology inc. ds21449c-page 13 tc649 table 5-2 gives examples of some commonly available transistors and mosfets. this table should be used as a guide only since there are many transistors and mosfets which will work just as well as those listed. the critical issues when choosing a device to use as q1 are: (1) the breakdown voltage (v (br)ceo or v ds (mosfet)) must be large enough to withstand the highest voltage applied to the fan ( note: this will occur when the fan is off); (2) 5 ma of base drive current must be enough to saturate the transistor when conducting the full fan current (transistor must have sufficient gain); (3) the v out voltage must be high enough to suf- ficiently drive the gate of the mosfet to minimize the r ds(on) of the device; (4) rated fan current draw must be within the transistor's/mosfet's current handling capability; and (5) power dissipation must be kept within the limits of the chosen device. figure 5-6: output drive transistor circuit topologies. table 5-2: transistors and mosfets for q 1 (v dd = 5v) device package max. v be(sat) /v gs (v) min. h fe v ceo /v ds (v) fan current (ma) suggested r base ( ? ) mmbt2222a sot-23 1.2 50 40 150 800 mps2222a to-92 1.2 50 40 150 800 mps6602 to-92 1.2 50 40 500 301 si2302 sot-23 2.5 na 20 500 note 1 mgsf1n02e sot-23 2.5 na 20 500 note 1 si4410 so-8 4.5 na 30 1000 note 1 si2308 sot-23 4.5 na 60 500 note 1 note 1: a series gate resistor may be used in order to control the mosfet turn-on and turn-off times. q 1 q 1 q 2 gnd v dd r sense r base v out v out fan a) single bipolar transistor q 1 gnd v dd r sense v out c) n-channel mosfet gnd v dd r sense r base fan b) darlington transistor pair fan
tc649 ds21449c-page 14 ? 2002 microchip technology inc. a base-current limiting resistor is required with bipolar transistors (figure 5-7). the correct value for this resistor can be determined as follows: v oh = v r sense + v be( sat ) + v r base v r sense = i fan x r sense v r base = r base x i base i base = i fan / h fe v oh is specified as 80% of v dd in section 1.0, ?electrical characteristics?; v be( sat ) is given in the cho- sen transistor data sheet. it is now possible to solve for r base . equation some applications benefit from the fan being powered from a negative supply to keep motor noise out of the positive supply rails. this can be accomplished as shown in figure 5-8, with zener diode d 1 offsetting the -12v power supply voltage, holding transistor q 1 off when v out is low. when v out is high, the voltage at the anode of d 1 increases by v out , causing q 1 to turn on. operation is otherwise the same as in the case of fan operation from +12v. figure 5-7: circuit for determining r base . figure 5-8: powering the fan from a -12v supply. r base = v oh - v be( sat ) - v r sense i base q 1 gnd v dd r sens e r base v oh = 80% v dd + v r base ? v be (sat) ? + v r sense ? fan + gnd +5v -12v q 1 * v dd v out tc649 fan r 2 * 2.2 k ? r 3 * 2.2 ? r 4 * 10 k ? d 1 12.0v zener note: * value depends on the specific application and is shown for example only. see section 5.0, "typical applications", for more details.
? 2002 microchip technology inc. ds21449c-page 15 tc649 5.6 latch-up considerations as with any cmos ic, the potential exists for latch-up if signals are applied to the device which are outside the power supply range. this is of particular concern during power-up if the external circuitry (such as the sensor network, v as divider or shutdown circuit) are powered by a supply different from that of the tc649. care should be taken to ensure that the tc649?s v dd supply powers up first. if possible, the networks attached to v in and v as should connect to the v dd sup- ply at the same physical location as the ic itself. even if the ic and any external networks are powered by the same supply, physical separation of the connecting points can result in enough parasitic capacitance and/ or inductance in the power supply connections to delay one power supply ?routing? versus another. 5.7 power supply routing and bypassing noise present on the v in and v as inputs may cause erroneous operation of the fault output. as a result, these inputs should be bypassed with a 0.01 f capacitor mounted as close to the package as possible. this is especially true of v in , which is usually drive from a high impedance source (such as a thermistor). addi- tionally, the v dd input should be bypassed with a 1 f capacitor with grounds being kept as short as possible. to keep fan noise off the tc649 ground pin, individual ground returns for the tc649 and the low side of the fan current sense resistor should be used. design example step 1. calculate r 1 and r 2 based on using an ntc having a resistance of 10 k ? at t min (25c) and 4.65 k ? at t max (45c) (see figure 5-9). r 1 = 20.5 k ? r 2 = 3.83 k ? step 2. set auto-shutdown level. v as = 1.8v. limit the divider current to 100 a r 5 = 33 k ? r 6 = 18 k ? step 3. design the output circuit. maximum fan motor current = 250 ma. q 1 beta is chosen at 50 from which r 7 = 800 ?. figure 5-9: design example. fault sense ntc 10 k ? @ 25?c r 1 20.5 k ? r 2 3.83 k ? r 5 33 k ? r 7 800 ? gnd reset shutdown (optional) q 1 +12v +5v +5v +5v v dd v in v as v out r sense 2.2 ? c sense 0.1 f c 1 1 f c f tc649 fan fan fault c b 0.01 f c b 0.01 f c b 1 f 1 8 4 6 7 5 2 3 r 6 18 k ? open- drain device
tc649 ds21449c-page 16 ? 2002 microchip technology inc. 5.8 tc649 as a microcontroller peripheral in a system containing a microcontroller or other host intelligence, the tc649 can be effectively managed as a cpu peripheral. routine fan control functions can be performed by the tc649 without processor interven- tion. the microcontroller receives temperature data from one or more points throughout the system. it calculates a fan operating speed based on an algorithm specifically designed for the application at hand. the processor controls fan speed using complementary port bits i/o1 through i/o3. resistors r 1 through r 6 (5% tolerance) form a crude 3-bit dac that translates this 3-bit code from the processor's outputs into a 1.6v dc control signal. a monolithic dac or digital pot may be used instead of the circuit shown in figure 5-10. with v as set at 1.8v, the tc649 enters auto-shutdown when the processor's output code is 000[b]. output codes 001[b] to 111[b] operate the fan from roughly 40% to 100% of full speed. an open-drain output from the processor (i/o0) can be used to reset the tc649 following detection of a fault condition. the fault out- put can be connected to the processor's interrupt input or to another i/o pin for polled operation. . figure 5-10: tc649 as a microcontroller peripheral. figure 5-11: v release vs. temperature. cmos microcontroller tc649 v in c f v as gnd v dd v out sense +5v analog or digital temperature data from one or more sensors i/o1 i/o2 i/o3 int gnd (optional) (msb) r 1 110 k ? r 2 240 k ? r 3 360 k ? (lsb) r 5 1.5 k ? +5v r 6 1 k ? r 4 18 k ? r 7 33 k ? +5v r 8 18 k ? c b .01f + 1f c b .01 f cmos outputs open-drain output fan +12v +5v c b 1 f r 9 800 ? +5v r 10 10 k ? 0.1 f 2n2222a r 11 2.2 ? (reset) 1 2 3 4 5 6 fault 7 8 i/o0 v release vs. temperature v release (v) 0?c 25?c temperature 85?c v dd = 3.0v v dd = 4.0v v dd = 5.0v v dd = 5.5v 1.0 0.9 0.8 0.7 0.6 0.5 0.4
? 2002 microchip technology inc. ds21449c-page 17 tc649 6.0 packaging information 6.1 package marking information legend: xx...x customer specific information* yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * standard marking consists of microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). for marking beyond this, certain price adders apply. please check with your microchip sales office. xxxxxxxx nnn yyww 8-lead pdip (300 mil) example: 8-lead soic (150 mil) example: xxxxxxxx yyww nnn tc649vpa 025 0215 tc649voa 0215 025 8-lead msop example: xxxxxx ywwnnn tc649e 215025
tc649 ds21449c-page 18 ? 2002 microchip technology inc. 8-lead plastic dual in-line (p) ? 300 mil (pdip) b1 b a1 a l a2 p e eb c e1 n d 1 2 units inches* millimeters dimension limits min nom max min nom max number of pins n 88 pitch p .100 2.54 top to seating plane a .140 .155 .170 3.56 3.94 4.32 molded package thickness a2 .115 .130 .145 2.92 3.30 3.68 base to seating plane a1 .015 0.38 shoulder to shoulder width e .300 .313 .325 7.62 7.94 8.26 molded package width e1 .240 .250 .260 6.10 6.35 6.60 overall length d .360 .373 .385 9.14 9.46 9.78 tip to seating plane l .125 .130 .135 3.18 3.30 3.43 lead thickness c .008 .012 .015 0.20 0.29 0.38 upper lead width b1 .045 .058 .070 1.14 1.46 1.78 lower lead width b .014 .018 .022 0.36 0.46 0.56 overall row spacing eb .310 .370 .430 7.87 9.40 10.92 mold draft angle top 51015 51015 mold draft angle bottom 51015 51015 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed jedec equivalent: ms-001 drawing no. c04-018 .010? (0.254mm) per side. significant characteristic
? 2002 microchip technology inc. ds21449c-page 19 tc649 8-lead plastic small outline (sn) ? narrow, 150 mil (soic) foot angle f 048048 15 12 0 15 12 0 mold draft angle bottom 15 12 0 15 12 0 mold draft angle top 0.51 0.42 0.33 .020 .017 .013 b lead width 0.25 0.23 0.20 .010 .009 .008 c lead thickness 0.76 0.62 0.48 .030 .025 .019 l foot length 0.51 0.38 0.25 .020 .015 .010 h chamfer distance 5.00 4.90 4.80 .197 .193 .189 d overall length 3.99 3.91 3.71 .157 .154 .146 e1 molded package width 6.20 6.02 5.79 .244 .237 .228 e overall width 0.25 0.18 0.10 .010 .007 .004 a1 standoff 1.55 1.42 1.32 .061 .056 .052 a2 molded package thickness 1.75 1.55 1.35 .069 .061 .053 a overall height 1.27 .050 p pitch 8 8 n number of pins max nom min max nom min dimension limits millimeters inches* units 2 1 d n p b e e1 h l c 45 f a2 a a1 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-012 drawing no. c04-057 significant characteristic
tc649 ds21449c-page 20 ? 2002 microchip technology inc. 8-lead plastic micro small outline package (ms) (msop) p a a1 a2 d l c dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not .037 .035 f footprint (reference) exceed. 010" (0.254mm) per side. notes: drawing no. c04-111 *controlling parameter mold draft angle top mold draft angle bottom foot angle lead width lead thickness c b 7 7 .004 .010 0 .006 .012 (f) dimension limits overall height molded package thickness molded package width overall length foot length standoff overall width number of pins pitch a l e1 d a1 e a2 .016 .114 .114 .022 .118 .118 .002 .030 .193 .034 min p n units .026 nom 8 inches 1.00 0.95 0.90 .039 0.15 0.30 .008 .016 6 0.10 0.25 0 7 7 0.20 0.40 6 millimeters* 0.65 0.86 3.00 3.00 0.55 4.90 .044 .122 .028 .122 .038 .006 0.40 2.90 2.90 0.05 0.76 min max nom 1.18 0.70 3.10 3.10 0.15 0.97 max 8 e1 e b n 1 2 significant characteristic .184 .200 4.67 .5.08
? 2002 microchip technology inc. ds21449c-page 21 tc649 6.2 taping form component taping orientation for 8-pin soic (narrow) devices package carrier width (w) pitch (p) part per full reel reel size 8-pin soic (n) 12 mm 8 mm 2500 13 in carrier tape, number of components per reel and reel size standard reel component orientation for tr suffix device pin 1 user direction of feed p w pin 1 component taping orientation for 8-pin msop devices user direction of feed standard reel component orientation for tr suffix device w p package carrier width (w) pitch (p) part per full reel reel size 8-pin msop 12 mm 8 mm 2500 13 in carrier tape, number of components per reel and reel size
tc649 ds21449c-page 22 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21449c-page23 tc649 systems information and upgrade hot line the systems information and upgrade line provides system users a listing of the latest versions of all of microchip's development systems software products. plus, this line provides information on how customers can receive the most current upgrade kits.the hot line numbers are: 1-800-755-2345 for u.s. and most of canada, and 1-480-792-7302 for the rest of the world. on-line support microchip provides on-line support on the microchip world wide web site. the web site is used by microchip as a means to make files and information easily available to customers. to view the site, the user must have access to the internet and a web browser, such as netscape ? or microsoft ? internet explorer. files are also available for ftp download from our ftp site. connecting to the microchip internet web site the microchip web site is available at the following url: www.microchip.com the file transfer site is available by using an ftp ser- vice to connect to: ftp://ftp.microchip.com the web site and file transfer site provide a variety of services. users may download files for the latest development tools, data sheets, application notes, user's guides, articles and sample programs. a vari- ety of microchip specific business information is also available, including listings of microchip sales offices, distributors and factory representatives. other data available for consideration is: ? latest microchip press releases ? technical support section with frequently asked questions ? design tips ? device errata ? job postings ? microchip consultant program member listing ? links to other useful web sites related to microchip products ? conferences for products, development systems, technical information and more ? listing of seminars and events 092002
tc649 ds21449c-page24 ? 2002 microchip technology inc. reader response it is our intention to provide you with the best documentation possible to ensure successful use of your microchip prod- uct. if you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please fax your comments to the technical publications manager at (480) 792-4150. please list the following information, and use this outline to provide us with your comments about this document. 1. what are the best features of this document? 2. how does this document meet your hardware and software development needs? 3. do you find the organization of this document easy to follow? if not, why? 4. what additions to the document do you think would enhance the structure and subject? 5. what deletions from the document could be made without affecting the overall usefulness? 6. is there any incorrect or misleading information (what and where)? 7. how would you improve this document? to : technical publications manager re: reader response total pages sent ________ from: name company address city / state / zip / country telephone: (_______) _________ - _________ application (optional): would you like a reply? y n device: literature number: questions: fax: (______) _________ - _________ ds21449c tc649
? 2002 microchip technology inc. ds21449c-page25 tc649 product identification system to order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. sales and support data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. x /xx package temperature range device device: tc649: pwm fan speed controller w/auto shutdown and fault detection temperature range: v = 0 c to +85 c e=-40 c to +85 c package: pa = plastic dip (300 mil body), 8-lead * oa = plastic soic, (150 mil body), 8-lead ua = plastic micro small outline (msop), 8-lead * pdip package is only offered in the v temp range. examples: a) tc649voa: pwm fan speed controller w/ auto-shutdown and fault detection, soic package. b) tc649vua: pwm fan speed controller w/ auto-shutdown and fault detection, msop package c) tc649vpa: pwm fan speed controller w/ auto-shutdown and fault detection, pdip package. d) tc649eoatr: pwm fan speed controller w/ auto-shutdown and fault detection, soic package, tape and reel.
tc649 ds21449c-page 26 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21449c - page 27 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical com- ponents in life support systems is not authorized except with express written approval by microchip. no licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, k ee l oq , mplab, pic, picmicro, picstart and pro mate are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, micro id , mxdev, mxlab, picmaster, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. dspic, dspicdem.net, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migratable memory, mpasm, mplib, mplink, mpsim, picc, picdem, picdem.net, rfpic, select mode and total endurance are trademarks of microchip technology incorporated in the u.s.a. and other countries. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2002, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, non-volatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified.
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